H5AN8G8NDJR vs K4A8G085WB-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G8NDJR disebabkan oleh SK hynix dan K4A8G085WB-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G8NDJR | K4A8G085WB-BIWE |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 3200 MT/s | 3200 Mbps |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | — |
| VDDQ | 1.2 V | — |
| VPP | 2.5 V | — |
| Suhu Operasi | 0°C to +95°C (Tc) | 0°C to +85°C |
| Kemasan | FBGA-78 (7.5x11 mm) | 78-FBGA |
| Latensi CAS | 22 (typical) | [DATA_NEEDED: CL value] |
| tRCD | 22 ns | — |
| tRP | 22 ns | — |
| Burst Length | 8 and 4 (with burst chop) | — |
| Self-Refresh Current | 30 mA (typical) | — |
| Active Standby Current | 60 mA (typical) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Tegangan Pemberi Arus | — | 1.2 V |
| Jenis Pemasangan | — | Surface Mount |
| Memory Interface | — | Parallel |
| Access Time | — | [DATA_NEEDED: tRCD, tRP, tRAS] |
| Refresh | — | Auto-refresh, self-refresh |
| Status RoHS | — | Compliant |
| Boson Bebas | — | Yes |