IAUCN04S7L006ATMA1 vs IAUC100N04S6L020ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L006ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L020ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7L006ATMA1 IAUC100N04S6L020ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Gambaran Suhu Operasi -55 °C to +175 °C -55 °C to +175 °C (TJ)
Kemasan PG-TDSON-8-43 PG-TDSON-8 (SS08, 5x6 mm leadless)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS-7 trench OptiMOS 6
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Kiraan Pin 8 —
Packaging Tape and Reel (ATMA1) Tape & Reel (TMA1)
Polarity Single N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS — 40 V
Continuous Drain Current (Tc) — 100 A
Power Dissipation (Tc) — 75 W
RDS(on) Maximum @ VGS=10V, ID=50A — 2.04 mΩ
RDS(on) Typical — 2.0 mΩ
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) Typical — 2.0 V
Qualification — Automotive grade

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