IAUCN04S7L006ATMA1 vs IAUC100N04S6L020ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L006ATMA1 sa pamamagitan ng Infineon at IAUC100N04S6L020ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7L006ATMA1 | IAUC100N04S6L020ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max | 0.6 mΩ at V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Gate Charge (Q_g) | [DATA_NEEDED: total gate charge] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 °C to +175 °C (TJ) |
| Packhaging | PG-TDSON-8-43 | PG-TDSON-8 (SS08, 5x6 mm leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS-7 trench | OptiMOS 6 |
| Automotive Qualified | Yes (AEC-Q101) | — |
| Tindminan RoHS | Compliant | Compliant |
| Bilang ng Pin | 8 | — |
| Packaging | Tape and Reel (ATMA1) | Tape & Reel (TMA1) |
| Polarity | Single N-Channel | — |
| Drain-Source Breakdown Voltage V(BR)DSS | — | 40 V |
| Continuous Drain Current (Tc) | — | 100 A |
| Power Dissipation (Tc) | — | 75 W |
| RDS(on) Maximum @ VGS=10V, ID=50A | — | 2.04 mΩ |
| RDS(on) Typical | — | 2.0 mΩ |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) Typical | — | 2.0 V |
| Qualification | — | Automotive grade |