IAUCN08S7L013ATMA1 vs IAUCN08S7L033ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L013ATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN08S7L013ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Arus Kumpal Tetap (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | [DATA_NEEDED: VGS(th) typical] |
| Gate Drive Voltage (typical) | 10 V | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | -55°C to +175°C (TJ) |
| Kemasan | PG-TDSON-8-53 (TDSON-8 FL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | AEC-Q101 (automotive) | Automotive Grade (per Infineon datasheet header) |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| Series | — | Automotive OptiMOS 7 |
| Jenis Transistor | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Technology | — | OptiMOS 7 trench MOSFET |