IAUCN08S7L013ATMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L013ATMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN08S7L013ATMA1 ✓ NakahandaInfineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L013ATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ | — |
| Patuloy na Drain Current (TC=25°C) | [DATA_NEEDED: continuous drain current at TC=25C] | — |
| Continuous Drain Current (TJ) | 293 A | — |
| Power Dissipation (TC) | 219 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage range] | [DATA_NEEDED: VGS(th) typical] |
| Gate Drive Voltage (typical) | 10 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55°C to +175°C (TJ) |
| Packhaging | PG-TDSON-8-53 (TDSON-8 FL) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020, typical for this package) |
| Qualification | AEC-Q101 (automotive) | Automotive Grade (per Infineon datasheet header) |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) | — |
| Series | — | Automotive OptiMOS 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Technology | — | OptiMOS 7 trench MOSFET |