IAUCN08S7N024TATMA1 vs IAUCN10S5L110TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N024TATMA1 disebabkan oleh Infineon dan IAUCN10S5L110TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7N024TATMA1 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 OptiMOS 5
FET Type N-Channel —
Technology MOSFET (Metal Oxide Semiconductor) N-Channel MOSFET, Trench, Logic Level
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) at Tj 165 A —
Power Dissipation (Pd) at Tc 157 W —
Rds(on) Max at Vgs=10V 2.44 mOhm —
Kemasan / Case PG-LHDSO-10-1 (SSO10T, 5x7 mm²) —
Jenis Pemasangan Surface Mount Surface Mount
Cooling Top-side cooled —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Automotive Qualification AEC-Q101 AEC-Q101 Extended Qualification
Status RoHS Compliant Compliant
Gate Threshold (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typ] —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Storage Temperature — [DATA_NEEDED: storage temperature]
Kemasan — PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Aras MSL — MSL1 (260°C peak reflow)
Avalanche Rated — 100% Avalanche Tested

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