IAUCN10S7L180ATMA1 vs IAUCN10S5L280DATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7L180ATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S7L180ATMA1 IAUCN10S5L280DATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
Jenis Transistor N-Channel MOSFET —
Number of Channels 1 —
Maximum Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tj) 39 A —
Power Dissipation (PD, Tc=25°C) 58 W —
Drain-Source On-Resistance (RDS(on)) 16.1 mΩ @ VGS=10 V —
Typical RDS(on) 18 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 1.6 V —
Maximum Gate-Source Voltage (VGS) ±20 V (±16 V per JLCPCB listing) —
Total Gate Charge (Qg) 11 nC —
Input Capacitance (Ciss) 272 pF —
Output Capacitance (Coss) 668 pF —
Reverse Transfer Capacitance (Crss) 7 pF —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-34 (Surface Mount) PG-TDSON-8-61 (SSO8)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes Yes (AEC-Q101, IAU prefix)
Status RoHS EU RoHS Compliant with Exemption Compliant
Configuration Single Quad Drain Triple Source Dual N-Channel MOSFET Array
Channel Mode Enhancement —
Part Status Active —
Product Family — OptiMOS 5
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) at Tj — 23 A
Power Dissipation (Pd) at Tc — 38 W
Technology — OptiMOS 5 Trench MOSFET
Gambaran Suhu Operasi — -55C to +175C (junction)
Kiraan Pin — 8
Aras MSL — 1
Packing — Tape & Reel (T&R)

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