IGLR70R200D2SXUMA1 vs IGT65R025D2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLR70R200D2SXUMA1 disebabkan oleh Infineon dan IGT65R025D2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGLR70R200D2SXUMA1 | IGT65R025D2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN Gen2 (G5) |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | GaN-on-Si, 200 mm wafer, wide-bandgap |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40 °C to +150 °C | -55C to +150C (junction, typical) |
| Kemasan | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-HSOF-8 (source-down, bottom-cooled) |
| RoHS | Compliant | — |
| Jenis Transistor | — | N-Channel GaN HEMT, enhancement-mode |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id, Tc) | — | 70 A |
| Power Dissipation (Pd, Tc) | — | 236 W |
| On-State Resistance (Rds(on)) | — | 25 mΩ (typical, per MPN suffix) |
| Jenis Pemasangan | — | Surface Mount |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Output Charge (Qoss) | — | [DATA_NEEDED: Qoss typical value] |
| Reverse Recovery Charge (Qrr) | — | Near-zero (GaN characteristic) |
| Status RoHS | — | Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |