IGLR70R200D2SXUMA1 vs IGT65R025D2ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGLR70R200D2SXUMA1 sa pamamagitan ng Infineon at IGT65R025D2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IGLR70R200D2SXUMA1 IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΩ | Infineon

IGLR70R200D2SXUMA1 ✓ Nakahanda
Infineon
IGT65R025D2ATMA1 IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 - 650V 70A GaN FET, PG-HSOF-8 | Infineon

IGT65R025D2ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGLR70R200D2SXUMA1 IGT65R025D2ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolGaN G5 CoolGaN Gen2 (G5)
Channel Type N-Channel —
Technology GaN HEMT (E-mode, enhancement-mode) GaN-on-Si, 200 mm wafer, wide-bandgap
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID, Tc) 9.3 A —
Power Dissipation (PD, Tc) 34 W —
On-Resistance (RDS(on), max) 200 mΩ —
Total Gate Charge (Qg) 1.26 nC —
Output Capacitance (Coss) 91 pF —
Reverse Transfer Capacitance (Crss) 0.21 pF —
Gate Threshold Voltage (VGS(th), typ) 1.2 V —
Hanay ng Temperature na Operasyon -40 °C to +150 °C -55C to +150C (junction, typical)
Packhaging PG-TSON-8-8 (surface mount, ThinPAK top-cooled) PG-HSOF-8 (source-down, bottom-cooled)
RoHS Compliant —
Uri ng Transistor — N-Channel GaN HEMT, enhancement-mode
Drain-Source Voltage (Vdss) — 650 V
Continuous Drain Current (Id, Tc) — 70 A
Power Dissipation (Pd, Tc) — 236 W
On-State Resistance (Rds(on)) — 25 mΩ (typical, per MPN suffix)
Uri ng Pagpapasok — Surface Mount
Gate Threshold (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Output Charge (Qoss) — [DATA_NEEDED: Qoss typical value]
Reverse Recovery Charge (Qrr) — Near-zero (GaN characteristic)
Tindminan RoHS — Compliant
Level ng MSL — [DATA_NEEDED: MSL rating]

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