IMZ120R080M1H vs C3M0080120D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IMZ120R080M1H disebabkan oleh Infineon dan C3M0080120D disebabkan oleh Wolfspeed. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IMZ120R080M1H | C3M0080120D |
|---|---|---|
| Merek | Infineon | Wolfspeed |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Wolfspeed |
| Product Family | CoolSiC 1200V SiC Trench MOSFET | — |
| Technology | Silicon Carbide (SiC) trench MOSFET | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Drain-to-Source Voltage (VDS) | 1200 V | — |
| On-State Resistance RDS(on) | 80 mOhm at Tj = 25 C | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (benchmark) | — |
| Turn-Off Gate Voltage | 0 V | — |
| Transistor Polarity | N-Channel | — |
| Gaya Pemasangan | Through Hole | — |
| Kemasan | PG-TO247-4 | TO-247-3 (through-hole, 3 leads + tab) |
| Robust Body Diode | Yes, supports hard commutation | — |
| Threshold-free On-state | Yes | — |
| Switching Losses | Very low (per datasheet) | — |
| Recommended Operating Margin | <= 80% of maximum ratings | — |
| RoHS | Compliant (per Mouser listing) | — |
| Part Number | — | C3M0080120D |
| Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | — | 1200 V |
| On-Resistance Rds(on) typ | — | 80 mOhm |
| Continuous Drain Current (Tc) | — | 36 A |
| Power Dissipation (Tc) | — | 192 W |
| Gate-Source Voltage (Vgs max) | — | -10 V to +25 V (recommended +15/-3 V) |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Jenis Pemasangan | — | Through Hole |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Body Diode | — | Intrinsic, zero reverse recovery (Qrr) |