IMZ120R080M1H vs C3M0080120D Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IMZ120R080M1H sa pamamagitan ng Infineon at C3M0080120D sa pamamagitan ng Wolfspeed. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IMZ120R080M1H | C3M0080120D |
|---|---|---|
| Brand | Infineon | Wolfspeed |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Wolfspeed |
| Product Family | CoolSiC 1200V SiC Trench MOSFET | — |
| Technology | Silicon Carbide (SiC) trench MOSFET | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Drain-to-Source Voltage (VDS) | 1200 V | — |
| On-State Resistance RDS(on) | 80 mOhm at Tj = 25 C | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (benchmark) | — |
| Turn-Off Gate Voltage | 0 V | — |
| Transistor Polarity | N-Channel | — |
| Style ng Pagpapasok | Through Hole | — |
| Packhaging | PG-TO247-4 | TO-247-3 (through-hole, 3 leads + tab) |
| Robust Body Diode | Yes, supports hard commutation | — |
| Threshold-free On-state | Yes | — |
| Switching Losses | Very low (per datasheet) | — |
| Recommended Operating Margin | <= 80% of maximum ratings | — |
| RoHS | Compliant (per Mouser listing) | — |
| Part Number | — | C3M0080120D |
| Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | — | 1200 V |
| On-Resistance Rds(on) typ | — | 80 mOhm |
| Continuous Drain Current (Tc) | — | 36 A |
| Power Dissipation (Tc) | — | 192 W |
| Gate-Source Voltage (Vgs max) | — | -10 V to +25 V (recommended +15/-3 V) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Uri ng Pagpapasok | — | Through Hole |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Body Diode | — | Intrinsic, zero reverse recovery (Qrr) |