IMZ120R080M1H vs C3M0080120D 比較
詳細並排比較 IMZ120R080M1H 由 Infineon 與 C3M0080120D 由 Wolfspeed. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IMZ120R080M1H | C3M0080120D |
|---|---|---|
| 品牌 | Infineon | Wolfspeed |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Wolfspeed |
| Product Family | CoolSiC 1200V SiC Trench MOSFET | — |
| Technology | Silicon Carbide (SiC) trench MOSFET | Silicon Carbide (SiC) Power MOSFET, 3rd generation (C3M) |
| Drain-to-Source Voltage (VDS) | 1200 V | — |
| On-State Resistance RDS(on) | 80 mOhm at Tj = 25 C | — |
| Gate Threshold Voltage VGS(th) | 4.5 V (benchmark) | — |
| Turn-Off Gate Voltage | 0 V | — |
| Transistor Polarity | N-Channel | — |
| 安裝方式 | Through Hole | — |
| 封裝 | PG-TO247-4 | TO-247-3 (through-hole, 3 leads + tab) |
| Robust Body Diode | Yes, supports hard commutation | — |
| Threshold-free On-state | Yes | — |
| Switching Losses | Very low (per datasheet) | — |
| Recommended Operating Margin | <= 80% of maximum ratings | — |
| RoHS | Compliant (per Mouser listing) | — |
| Part Number | — | C3M0080120D |
| Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | — | 1200 V |
| On-Resistance Rds(on) typ | — | 80 mOhm |
| Continuous Drain Current (Tc) | — | 36 A |
| Power Dissipation (Tc) | — | 192 W |
| Gate-Source Voltage (Vgs max) | — | -10 V to +25 V (recommended +15/-3 V) |
| 工作接面溫度 | — | -55 C to +175 C |
| 安裝類型 | — | Through Hole |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Body Diode | — | Intrinsic, zero reverse recovery (Qrr) |