IPB70N10S3L12ATMA1 vs BSC042NE7NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB70N10S3L12ATMA1 disebabkan oleh Infineon dan BSC042NE7NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPB70N10S3L12ATMA1 BSC042NE7NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) —
Jenis Transistor N-Channel MOSFET, Enhancement Mode N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Boson Bebas Yes —
Part Number — BSC042NE7NS3GATMA1
Technology — OptiMOS 3
Continuous Drain Current (ID) at Ta — 19 A
Continuous Drain Current (ID) at Tc — 100 A
RDS(on) max at VGS=10V — 4.2 mOhm
Gate-Source Voltage (VGS) max — +/-20 V
Gate Threshold Voltage (VGS(th)) typ — 1.7 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 125 W
Gambaran Suhu Operasi — -55C to +150C
Kemasan — PG-TDSON-8-1 (SuperSO8 5x6 mm)
Aras MSL — 1
Status RoHS — Compliant

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