IPD031N06L3GATMA1 vs BSC039N06NSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N06L3GATMA1 disebabkan oleh Infineon dan BSC039N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD031N06L3GATMA1 BSC039N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (TrenchFET-style)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A [DATA_NEEDED: IDM pulsed value at TC]
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TO252-3 (DPAK) PG-TDSON-8-6 (TDSON EP, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS 3 OptiMOS 5
Aras MSL 1 (Unlimited) [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA — 19 A
Continuous Drain Current (ID) at TC — 100 A
On-Resistance RDS(on) max at VGS=10V — 3.9 mOhm
On-Resistance RDS(on) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Power Dissipation at TA (PD) — 2.5 W
Power Dissipation at TC (PD) — 69 W
Suhu Hubungan Operasi — -55C to +150C
Bilangan Pin — 8
Gate Drive Voltage (VGS) — ±20 V max

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