IPD082N10N3GATMA1 vs BSZ011NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD082N10N3GATMA1 disebabkan oleh Infineon dan BSZ011NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD082N10N3GATMA1 BSZ011NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan / Case PG-TO252-3 (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes Yes
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 35 A
Continuous Drain Current (ID) at TC=25°C — 40 A
On-State Resistance RDS(on) max at VGS=10 V — 1.1 mΩ (typical, per datasheet title)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 69 W
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) — 4.5 V to 10 V
Gambaran Suhu Operasi — -55°C to +150°C
Kemasan — PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Boson Bebas — Yes

Laporan Datasheet & Sumber

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