IPD082N10N3GATMA1 vs BSZ011NE2LS5IATMA1 Perbandingan

Perbandingan bersamaan detil IPD082N10N3GATMA1 dari Infineon dan BSZ011NE2LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD082N10N3GATMA1 BSZ011NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 —
Manufacturer Infineon Technologies —
Technology OptiMOS 3 (Trench N-Channel) OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket / Case PG-TO252-3 (DPAK), surface mount —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes Yes
Level MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 35 A
Continuous Drain Current (ID) at TC=25°C — 40 A
On-State Resistance RDS(on) max at VGS=10 V — 1.1 mΩ (typical, per datasheet title)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 69 W
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) — 4.5 V to 10 V
Rentang Suhu Kerja — -55°C to +150°C
Paket — PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Bebas Halogen — Yes

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