IPD082N10N3GATMA1 vs IPD70N10S312ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD082N10N3GATMA1 disebabkan oleh Infineon dan IPD70N10S312ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD082N10N3GATMA1 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IPD082N10N3GATMA1 IPD70N10S312ATMA1
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Technology OptiMOS 3 (Trench N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) @ Tc=25°C 80 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
On-Resistance RDS(on) max @ VGS=10 V 8.2 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/max] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] 65 nC @ 10 V
Power Dissipation (PD) @ Tc=25°C 125 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan / Case PG-TO252-3 (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant —
Automotive Qualified (AEC-Q101) Not applicable (industrial/consumer grade) —
Lead-Free Yes —
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (up to 260 °C peak reflow)
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc) — 70 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Input Capacitance (Ciss) — 4355 pF @ 25 V
Operating Temperature (TJ) — -55 °C to +175 °C
Kemasan — PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga