IPD082N10N3GATMA1 vs IPD70N10S312ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD082N10N3GATMA1 sa pamamagitan ng Infineon at IPD70N10S312ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD082N10N3GATMA1 | IPD70N10S312ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPD082N10N3GATMA1 | IPD70N10S312ATMA1 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Technology | OptiMOS 3 (Trench N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 65 nC @ 10 V |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| Temperature ng Junction na Operasyon | -55°C to +175°C | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK), surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Tindminan RoHS | Compliant | — |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | MSL1 (up to 260 °C peak reflow) |
| Product Family | — | OptiMOS-T Power-Transistor |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| Packhaging | — | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |