IPD082N10N3GATMA1 vs IPD70N10S312ATMA1 比較
詳細並排比較 IPD082N10N3GATMA1 由 Infineon 與 IPD70N10S312ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ 啟用中規格比較
| 參數 | IPD082N10N3GATMA1 | IPD70N10S312ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Part Number | IPD082N10N3GATMA1 | IPD70N10S312ATMA1 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Technology | OptiMOS 3 (Trench N-Channel) | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ Tc=25°C | 80 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-Resistance RDS(on) max @ VGS=10 V | 8.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/max] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | 65 nC @ 10 V |
| Power Dissipation (PD) @ Tc=25°C | 125 W | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK), surface mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| RoHS 狀態 | Compliant | — |
| Automotive Qualified (AEC-Q101) | Not applicable (industrial/consumer grade) | — |
| Lead-Free | Yes | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | MSL1 (up to 260 °C peak reflow) |
| Product Family | — | OptiMOS-T Power-Transistor |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-State Resistance (RDS(on)) | — | 11.1 mΩ @ 70 A, 10 V VGS |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Input Capacitance (Ciss) | — | 4355 pF @ 25 V |
| Operating Temperature (TJ) | — | -55 °C to +175 °C |
| 封裝 | — | PG-TO252-3-11 (DPAK, 2 Leads + Tab) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % (per datasheet) |
| RoHS Compliance | — | Green product, RoHS compliant |