IPD50N06S409ATMA2 vs IPD11DP10NMATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPD11DP10NMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD50N06S409ATMA2 | IPD11DP10NMATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | OptiMOS™ Trench |
| Drain-Source Voltage (VDS) | 60 V | -100 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | 4 V (typ at 1.7 mA) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK) |
| Kiraan Pin | 3 (2 + Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (Ta) | — | 3.4 A |
| Continuous Drain Current (Tc) | — | 22 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 125 W |
| On-Resistance RDS(on) max at VGS=10V | — | 111 mΩ |
| On-Resistance RDS(on) at ID=18A, VGS=10V | — | 111 mΩ |
| Total Gate Charge (Qg) at VGS=10V | — | 74 nC |
| Input Capacitance (Ciss) | — | 230 pF |
| Output Capacitance (Coss) | — | 63 pF |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |