IPD50N10S3L16ATMA2 vs IPD50N06S409ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N10S3L16ATMA2 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD50N10S3L16ATMA2 - 100V 50A 15mΩ N-Ch OptiMOS-T MOSFET | Infineon
IPD50N10S3L16ATMA2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPD50N10S3L16ATMA2 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS-T | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc=25°C | 50 A | — |
| Pulsed Drain Current (IDM) | 180 A | — |
| Maximum R_DS(on) at VGS=10V | 15 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Power Dissipation (Ptot) at Tc=25°C | 100 W | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (junction) | — |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (2 + Tab) | 3 (2 + Tab) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Delivery Form | Tape and Reel (T&R) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |