IPD50N10S3L16ATMA2 vs IPD50N06S409ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N10S3L16ATMA2 sa pamamagitan ng Infineon at IPD50N06S409ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD50N06S409ATMA2 IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon

IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon

IPD50N06S409ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD50N10S3L16ATMA2 IPD50N06S409ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS-T —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at Tc=25°C 50 A —
Pulsed Drain Current (IDM) 180 A —
Maximum R_DS(on) at VGS=10V 15 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (Ptot) at Tc=25°C 100 W —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (junction) —
Packhaging PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (2 + Tab) 3 (2 + Tab)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) —
Delivery Form Tape and Reel (T&R) —
Technology — N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Lead-Free / Halogen-Free — [DATA_NEEDED]

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