IPD50P04P413ATMA2 vs IPD90P04P405ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50P04P413ATMA2 disebabkan oleh Infineon dan IPD90P04P405ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD50P04P413ATMA2 IPD90P04P405ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Device Type P-Channel MOSFET —
Technology OptiMOS-P2 (Trench) —
Drain-Source Voltage (VDS) -40 V -40 V
Continuous Drain Current (TC=25°C, ID) 50 A —
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation (TC=25°C, Ptot) 58 W —
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max) —
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) range]
Gate-Source Voltage (VGS) max ±20 V ±20 V
Maximum Junction Temperature (TJ,max) 175 °C —
Gambaran Suhu Operasi -55 °C to +175 °C -55 °C to +175 °C (Tj)
Kemasan PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs —
Aras MSL 1 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Polarity — P-Channel
Continuous Drain Current (ID, Tc) — -90 A
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Kiraan Pin — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)

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