IPD50P04P413ATMA2 vs IPD90P04P405ATMA2 Comparison

Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPD90P04P405ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50P04P413ATMA2 IPD90P04P405ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.69
Polarity / Device Type P-Channel MOSFET
Technology OptiMOS-P2 (Trench)
Drain-Source Voltage (VDS) -40 V -40 V
Continuous Drain Current (TC=25°C, ID) 50 A
Continuous Drain Current (TC=100°C, ID) [DATA_NEEDED: ID @ 100°C]
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: pulsed drain current]
Power Dissipation (TC=25°C, Ptot) 58 W
On-State Resistance (RDS(on)) @ VGS=-10V 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) range]
Gate-Source Voltage (VGS) max ±20 V ±20 V
Maximum Junction Temperature (TJ,max) 175 °C
Operating Temperature Range -55 °C to +175 °C -55 °C to +175 °C (Tj)
Package PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK, surface mount)
Mounting Type Surface Mount Surface Mount
Standard Pack Quantity (13" reel) 2500 pcs
MSL Level 1 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 qualified
RoHS Status Compliant Compliant
Polarity P-Channel
Continuous Drain Current (ID, Tc) -90 A
Power Dissipation (PD, Tc) 125 W
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical)
Total Gate Charge (Qg) [DATA_NEEDED: Qg total]
Pin Count 3 (Gate, Drain, Source)
Process Technology OptiMOS-P2 (trench + field plate)

Datasheets & Resources

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