IPD50P04P413ATMA2 vs IPD90P04P405ATMA2 比較
詳細並排比較 IPD50P04P413ATMA2 由 Infineon 與 IPD90P04P405ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD50P04P413ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | -40 V |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) range] |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55 °C to +175 °C (Tj) |
| 封裝 | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 狀態 | Compliant | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |