IPD60R180P7ATMA1 vs IPD5N25S3430ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R180P7ATMA1 disebabkan oleh Infineon dan IPD5N25S3430ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD60R180P7ATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 °C to +175 °C |
| Kemasan | PG-TO252-3 (DPAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 5 A |
| Pulsed Drain Current (IDM) | — | 20 A |
| RDS(on) max @ VGS=10V | — | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | — | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | — | 41 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead Finish | — | Matte Tin (lead-free) |
| Configuration | — | Single, 3-pin (2+Tab) |