IPD60R180P7ATMA1 vs IPD5N25S3430ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R180P7ATMA1 sa pamamagitan ng Infineon at IPD5N25S3430ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon
IPD5N25S3430ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R180P7ATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | 600 V | 250 V |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | -55 °C to +175 °C |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25°C) | — | 5 A |
| Pulsed Drain Current (IDM) | — | 20 A |
| RDS(on) max @ VGS=10V | — | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | — | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | — | 41 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead Finish | — | Matte Tin (lead-free) |
| Configuration | — | Single, 3-pin (2+Tab) |