IPD60R280P7SAUMA1 vs IPD70N10S312ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R280P7SAUMA1 disebabkan oleh Infineon dan IPD70N10S312ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R280P7SAUMA1 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V 100 V
Continuous Drain Current (ID, Tc) 12 A 70 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 180 A
Static Drain-Source On-Resistance (RDS(on)) 280 mΩ (typical) —
Gate-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) 4 V max @ ID = 190 µA [DATA_NEEDED: VGS(th)]
Total Power Dissipation (Ptot, Tc) 53 W —
Operating Junction Temperature (TJ) -40 °C to +150 °C —
Technology CoolMOS P7 Superjunction (SJ) N-channel —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 MSL1 (up to 260 °C peak reflow)
Series CoolMOS P7 (7th generation, 600 V) —
Status RoHS Compliant —
Integrated ESD Protection Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IPD70N10S312ATMA1
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Gate-Source Voltage (VGS) — ±20 V
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga