IPD60R360P7ATMA1 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R360P7ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R360P7ATMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (V_DS) 600 V —
Gate-Source Voltage (V_GS) ±20 V (max) —
Continuous Drain Current (I_D) at T_C=25°C 9 A —
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current] —
R_DS(on) max @ V_GS=10V 360 mΩ —
Total Power Dissipation (P_tot) at T_C=25°C 41 W —
Suhu Hubungan Operasi -55°C to +150°C —
Storage Temperature -55°C to +150°C —
Kemasan / Case PG-TO252-3 (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) typ 3.5 V (typ) —
ESD Protection (HBM) >2 kV (per datasheet) —
Aras MSL 1 (per JEDEC J-STD20) —
RoHS Compliance Compliant —
Qualification Industrial grade per JEDEC (J-STD20, JESD22) —
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Kemasan — PG-TDSON-8 (PQFN 5x6) Drain-Down
Gambaran Suhu Operasi — -55 C to +175 C
Status RoHS — Compliant
MSL (Moisture Sensitivity Level) — 1

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga