IPD60R360P7ATMA1 vs ISC015N06NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R360P7ATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R360P7ATMA1 - 600V CoolMOS P7 MOSFET, 360mOhm, 9A | Infineon
IPD60R360P7ATMA1 ✓ NakahandaInfineon
ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N06NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R360P7ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Gate-Source Voltage (V_GS) | ±20 V (max) | — |
| Continuous Drain Current (I_D) at T_C=25°C | 9 A | — |
| Pulsed Drain Current (I_D,pulse) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max @ V_GS=10V | 360 mΩ | — |
| Total Power Dissipation (P_tot) at T_C=25°C | 41 W | — |
| Temperature ng Junction na Operasyon | -55°C to +150°C | — |
| Storage Temperature | -55°C to +150°C | — |
| Packhaging / Kaso | PG-TO252-3 (DPAK), surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Threshold Voltage (V_GS(th)) typ | 3.5 V (typ) | — |
| ESD Protection (HBM) | >2 kV (per datasheet) | — |
| Level ng MSL | 1 (per JEDEC J-STD20) | — |
| RoHS Compliance | Compliant | — |
| Qualification | Industrial grade per JEDEC (J-STD20, JESD22) | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Packhaging | — | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C |
| Tindminan RoHS | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | 1 |