IPD60R380C6ATMA1 vs IPD65R225C7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R380C6ATMA1 disebabkan oleh Infineon dan IPD65R225C7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD60R380C6ATMA1 IPD65R225C7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: typical VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction Super-junction (SJ) / CoolMOS
FET Type N-Channel —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Manufacturer — Infineon Technologies
Series — CoolMOS C7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDSS) — 650 V
Continuous Drain Current (ID) at TC — 11 A
Power Dissipation (PD) at TC — 63 W
On-Resistance RDS(on) max — 225 mΩ
Gate-Source Voltage (VGS) — ±20 V (max)
Gambaran Suhu Operasi — -55°C to +150°C
Bilangan Pin — 3 (2 + tab)
Avalanche Energy Rated — Yes (per datasheet)

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