IPD70N10S312ATMA1 vs IPD082N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA1 disebabkan oleh Infineon dan IPD082N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA1 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 IPD082N10N3GATMA1
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/max]
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V [DATA_NEEDED: Qg typical]
Operating Temperature (TJ) -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260 °C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Technology — OptiMOS 3 (Trench N-Channel)
Continuous Drain Current (ID) @ Tc=25°C — 80 A
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Power Dissipation (PD) @ Tc=25°C — 125 W
Suhu Hubungan Operasi — -55°C to +175°C
Kemasan / Case — PG-TO252-3 (DPAK), surface mount
Kiraan Pin — 3 (Gate, Drain, Source)
Status RoHS — Compliant
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

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