IPD70N10S312ATMA1 vs IPD082N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA1 dari Infineon dan IPD082N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA1 IPD082N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 IPD082N10N3GATMA1
Product Family OptiMOS-T Power-Transistor —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/max]
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V [DATA_NEEDED: Qg typical]
Operating Temperature (TJ) -55 °C to +175 °C —
Paket PG-TO252-3-11 (DPAK, 2 Leads + Tab) —
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260 °C peak reflow) 1 (per JEDEC J-STD-020)
Automotive Qualification AEC-Q101 —
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Technology — OptiMOS 3 (Trench N-Channel)
Continuous Drain Current (ID) @ Tc=25°C — 80 A
On-Resistance RDS(on) max @ VGS=10 V — 8.2 mΩ
Power Dissipation (PD) @ Tc=25°C — 125 W
Suhu Hubung Kerja — -55°C to +175°C
Paket / Case — PG-TO252-3 (DPAK), surface mount
Jumlah Pin — 3 (Gate, Drain, Source)
Status RoHS — Compliant
Automotive Qualified (AEC-Q101) — Not applicable (industrial/consumer grade)
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon