IPD70N10S312ATMA1 vs IPD082N10N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S312ATMA1 sa pamamagitan ng Infineon at IPD082N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD082N10N3GATMA1 - 100V N-Channel OptiMOS 3 Power MOSFET | Infineon
IPD082N10N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IPD70N10S312ATMA1 | IPD082N10N3GATMA1 |
| Product Family | OptiMOS-T Power-Transistor | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc) | 70 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-State Resistance (RDS(on)) | 11.1 mΩ @ 70 A, 10 V VGS | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/max] |
| Input Capacitance (Ciss) | 4355 pF @ 25 V | — |
| Total Gate Charge (Qg) | 65 nC @ 10 V | [DATA_NEEDED: Qg typical] |
| Operating Temperature (TJ) | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-11 (DPAK, 2 Leads + Tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260 °C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100 % (per datasheet) | — |
| RoHS Compliance | Green product, RoHS compliant | — |
| Technology | — | OptiMOS 3 (Trench N-Channel) |
| Continuous Drain Current (ID) @ Tc=25°C | — | 80 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 8.2 mΩ |
| Power Dissipation (PD) @ Tc=25°C | — | 125 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Packhaging / Kaso | — | PG-TO252-3 (DPAK), surface mount |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Tindminan RoHS | — | Compliant |
| Automotive Qualified (AEC-Q101) | — | Not applicable (industrial/consumer grade) |
| Lead-Free | — | Yes |