IPD80R1K4P7ATMA1 vs IPN95R3K7P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD80R1K4P7ATMA1 disebabkan oleh Infineon dan IPN95R3K7P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD80R1K4P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | N-Channel Superjunction | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 950 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Pembuangan Kuasa (Ptot) | 32 W | — |
| Suhu Hubungan Operasi | -55C to +150C | -55 C to +150 C |
| Kemasan | PG-TO252-2 (DPAK) | PG-SOT223 (3-pin + tab, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain/Tab, Source) | — |
| Status RoHS | Compliant | Compliant |
| REACH Status | Compliant | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Lead-Free | — | Yes |