IPD80R1K4P7ATMA1 vs IPN95R3K7P7ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R1K4P7ATMA1 sa pamamagitan ng Infineon at IPN95R3K7P7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 - 800V CoolMOS P7 MOSFET | Infineon

IPD80R1K4P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD80R1K4P7ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology N-Channel Superjunction Super-junction (CoolMOS P7)
Drain-Source Voltage (VDS) 800 V 950 V
Continuous Drain Current (ID) at Tc=25C 4 A —
On-Resistance (RDS(on)) typ/max 1.2 ohm typ / 1.4 ohm max —
Gate Threshold Voltage (VGS(th)) 3.5 V (typ) —
Gate Charge (Qg) typ [DATA_NEEDED: Qg value] —
Pwersang Pinahihigpit (Ptot) 32 W —
Temperature ng Junction na Operasyon -55C to +150C -55 C to +150 C
Packhaging PG-TO252-2 (DPAK) PG-SOT223 (3-pin + tab, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain/Tab, Source) —
Tindminan RoHS Compliant Compliant
REACH Status Compliant —
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Avalanche Energy Rated Yes —
Body Diode Integrated, fast recovery —
Uri ng Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Lead-Free — Yes

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