IPD80R1K4P7ATMA1 vs IPN95R3K7P7ATMA1 比較
詳細並排比較 IPD80R1K4P7ATMA1 由 Infineon 與 IPN95R3K7P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD80R1K4P7ATMA1 | IPN95R3K7P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | N-Channel Superjunction | Super-junction (CoolMOS P7) |
| Drain-Source Voltage (VDS) | 800 V | 950 V |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| On-Resistance (RDS(on)) typ/max | 1.2 ohm typ / 1.4 ohm max | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| 功率耗散 (Ptot) | 32 W | — |
| 工作接面溫度 | -55C to +150C | -55 C to +150 C |
| 封裝 | PG-TO252-2 (DPAK) | PG-SOT223 (3-pin + tab, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain/Tab, Source) | — |
| RoHS 狀態 | Compliant | Compliant |
| REACH Status | Compliant | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Avalanche Energy Rated | Yes | — |
| Body Diode | Integrated, fast recovery | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 2.0 A |
| Power Dissipation (Pd) at Tc | — | 6 W |
| On-State Resistance (RDS(on)) max | — | 3700 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Lead-Free | — | Yes |