IPG20N06S2L65AATMA1 vs IPG20N04S4L11ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N06S2L65AATMA1 disebabkan oleh Infineon dan IPG20N04S4L11ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPG20N06S2L65AATMA1 | IPG20N04S4L11ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | 2 N-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | 55 V | 40 V |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS-T2 trench |
| Kemasan | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| Aras MSL | MSL1 (peak reflow 260 C) | 1 (260C peak reflow) |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| FET Feature | — | Logic Level Gate |
| Continuous Drain Current (ID) @ 25C | — | 20 A per channel |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | — | 11.6 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Power Dissipation (PD) | — | 41 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Avalanche Rating | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Qualified |