IPL60R125P7AUMA1 vs IPB60R280P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R125P7AUMA1 disebabkan oleh Infineon dan IPB60R280P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R125P7AUMA1 IPB60R280P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 CoolMOS P7 (600 V)
Technology Superjunction (SJ) N-channel MOSFET Superjunction (SJ)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25C) 27 A —
On-State Resistance RDS(on) max 125 mOhm —
Gate Charge (Qg, typ) 36 nC —
Total Gate Charge Qg (typ) 36 nC —
Output Capacitance Coss (typ) [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr] —
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf] —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage VGS(th), typ 3.5 V —
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Suhu Hubungan Operasi -55 C to +150 C —
Kemasan ThinPAK 8x8 (4-pin + exposed pad) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Tingkat sensitiviti Air Nama (MSL) MSL 2 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Pin Configuration Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DSS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 12 A
On-Resistance R_DS(on) max (V_GS=10V) — 280 mOhm
Gate-Source Threshold V_GS(th) typ — 3.5 V
Power Dissipation P_D (T_C=25°C) — 53 W
Kiraan Pin — 3 (2 + Tab)
Gambaran Suhu Operasi — -55 °C to +150 °C (T_j max)
Configuration — Single N-Channel
Lead-Free — Yes
Generation — 7th Gen CoolMOS (successor to P6)

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