IPLU300N04S41R1XTMA1 vs IAUC100N04S6N028ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPLU300N04S41R1XTMA1 disebabkan oleh Infineon dan IAUC100N04S6N028ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ AktifInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPLU300N04S41R1XTMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPLU300N04S41R1XTMA1 | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | OptiMOS (Trench MOSFET) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 300 A | — |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 300 W | — |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | 1.15 mΩ | — |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | 151 nC | — |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | 12,090 pF | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Suhu Hubungan Operasi | 175 °C | — |
| Peak Reflow Temperature (AEC-Q) | 260 °C | — |
| Kemasan | PG-HSOF-8-1 (8-PowerSFN, surface mount) | PG-TDSON-8 (TDSON-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS Compliance | Yes (Green Product) | — |
| Lead-Free | Yes (100% lead-free) | — |
| Configuration | Single with built-in diode | — |
| Packing | Tape & Reel (TR) | — |
| Series | — | OptiMOS 6 40V |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at T_C=25°C | — | 100 A |
| Pulsed Drain Current (I_DM) | — | 400 A |
| R_DS(on) max @ V_GS=10V | — | 2.8 mΩ (typical) |
| Gate Threshold Voltage (V_GS(th)) | — | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25°C | — | 62 W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes |
| Status RoHS | — | Compliant |