IPN60R2K0PFD7SATMA1 vs IPN95R3K7P7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN60R2K0PFD7SATMA1 disebabkan oleh Infineon dan IPN95R3K7P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPN60R2K0PFD7SATMA1 IPN95R3K7P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS PFD7 —
Channel Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 600 V —
Continuous Drain Current (Tc) 3 A —
Power Dissipation (Tc) 6 W —
RDS(on) typical @ VGS=10V 2.0 Ohm —
RDS(on) max @ VGS=10V 1.626 Ohm (per Infineon product page) —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) 3.8 nC @ 10 V (per UTMel listing) —
Input Capacitance (Ciss) 134 pF @ 400 V (per UTMel listing) —
Technology CoolMOS superjunction Super-junction (CoolMOS P7)
Kemasan PG-SOT223-3-1 (SOT-223) PG-SOT223 (3-pin + tab, surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant (per Newark listing) Compliant
Series — CoolMOS P7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 950 V
Continuous Drain Current (ID) at Tc — 2.0 A
Power Dissipation (Pd) at Tc — 6 W
On-State Resistance (RDS(on)) max — 3700 mOhm
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Suhu Hubungan Operasi — -55 C to +150 C
Lead-Free — Yes

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