IPN70R1K4P7SATMA1 vs IPN60R2K0PFD7SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN70R1K4P7SATMA1 disebabkan oleh Infineon dan IPN60R2K0PFD7SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif
Infineon
IPN60R2K0PFD7SATMA1 IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 - 600V CoolMOS PFD7 MOSFET | Infineon

IPN60R2K0PFD7SATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPN70R1K4P7SATMA1 IPN60R2K0PFD7SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 CoolMOS PFD7
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 700 V 600 V
Continuous Drain Current (ID) at TC 4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 3.8 nC @ 10 V (per UTMel listing)
Total Power Dissipation (PD) at TC 6.2 W —
Technology Superjunction (CoolMOS P7) CoolMOS superjunction
Kemasan PG-SOT223 (3-pin + tab, surface mount) PG-SOT223-3-1 (SOT-223)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (TJ) [DATA_NEEDED: operating temperature range]
Configuration Single with built-in diode —
Kiraan Pin 3 (Gate, Drain, Source) —
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) —
Status RoHS Compliant Compliant (per Newark listing)
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Channel Type — N-Channel
Continuous Drain Current (Tc) — 3 A
Power Dissipation (Tc) — 6 W
RDS(on) typical @ VGS=10V — 2.0 Ohm
RDS(on) max @ VGS=10V — 1.626 Ohm (per Infineon product page)
Gate-Source Voltage (VGS) max — ±20 V
Input Capacitance (Ciss) — 134 pF @ 400 V (per UTMel listing)

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