IPN70R1K4P7SATMA1 vs IPN60R2K0PFD7SATMA1 比較
詳細並排比較 IPN70R1K4P7SATMA1 由 Infineon 與 IPN60R2K0PFD7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN70R1K4P7SATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | CoolMOS PFD7 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | 600 V |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.8 nC @ 10 V (per UTMel listing) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | CoolMOS superjunction |
| 封裝 | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (TJ) | [DATA_NEEDED: operating temperature range] |
| Configuration | Single with built-in diode | — |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| RoHS 狀態 | Compliant | Compliant (per Newark listing) |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Channel Type | — | N-Channel |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |