IPN70R1K4P7SATMA1 vs IPN60R2K0PFD7SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPN70R1K4P7SATMA1 sa pamamagitan ng Infineon at IPN60R2K0PFD7SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPN70R1K4P7SATMA1 | IPN60R2K0PFD7SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS P7 | CoolMOS PFD7 |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (V(BR)DSS) | 700 V | 600 V |
| Continuous Drain Current (ID) at TC | 4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 1.4 ohm class (per '1K4' suffix) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.8 nC @ 10 V (per UTMel listing) |
| Total Power Dissipation (PD) at TC | 6.2 W | — |
| Technology | Superjunction (CoolMOS P7) | CoolMOS superjunction |
| Packhaging | PG-SOT223 (3-pin + tab, surface mount) | PG-SOT223-3-1 (SOT-223) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | [DATA_NEEDED: operating temperature range] |
| Configuration | Single with built-in diode | — |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| DPAK Footprint Compatible | Yes (drop-in alternative to DPAK per datasheet) | — |
| Tindminan RoHS | Compliant | Compliant (per Newark listing) |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Channel Type | — | N-Channel |
| Continuous Drain Current (Tc) | — | 3 A |
| Power Dissipation (Tc) | — | 6 W |
| RDS(on) typical @ VGS=10V | — | 2.0 Ohm |
| RDS(on) max @ VGS=10V | — | 1.626 Ohm (per Infineon product page) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 134 pF @ 400 V (per UTMel listing) |