IPN80R1K2P7ATMA1 vs IPD80R1K4P7ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN80R1K2P7ATMA1 disebabkan oleh Infineon dan IPD80R1K4P7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPN80R1K2P7ATMA1 | IPD80R1K4P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | N-Channel Superjunction |
| Kemasan | SOT-223 (3-pin, 2 + tab) | PG-TO252-2 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C (TJ) | — |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 800 V |
| Continuous Drain Current (ID) at Tc=25C | — | 4 A |
| On-Resistance (RDS(on)) typ/max | — | 1.2 ohm typ / 1.4 ohm max |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg value] |
| Pembuangan Kuasa (Ptot) | — | 32 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Kiraan Pin | — | 3 (Gate, Drain/Tab, Source) |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |
| Avalanche Energy Rated | — | Yes |
| Body Diode | — | Integrated, fast recovery |