IPTC039N15NM5ATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC039N15NM5ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPTC039N15NM5ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc | 190 A | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 319 W | — |
| On-Resistance RDS(on) typical | 3.9 mOhm | — |
| Gate Charge Qg typical | 74 nC | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Kemasan | PG-HDSOP-16-2 (top-side cooled) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench | Trench MOSFET (OptiMOS 5) |
| Cooling | Top-side cooled (case above PCB) | — |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | — | 1 |