IPTC039N15NM5ATMA1 vs ISC015N06NM5ATMA1 Comparison

Detailed side-by-side comparison of IPTC039N15NM5ATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 βœ“ Active

Specification Comparison

Parameter IPTC039N15NM5ATMA1 ISC015N06NM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.05 $0.62
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 150 V β€”
Continuous Drain Current (ID) at Ta 21 A β€”
Continuous Drain Current (ID) at Tc 190 A β€”
Power Dissipation (PD) at Ta 3.8 W β€”
Power Dissipation (PD) at Tc 319 W β€”
On-Resistance RDS(on) typical 3.9 mOhm β€”
Gate Charge Qg typical 74 nC β€”
Maximum Gate-Source Voltage (VGS) 20 V β€”
Operating Temperature -55 C to +175 C (junction) β€”
Package PG-HDSOP-16-2 (top-side cooled) PG-TDSON-8 (PQFN 5x6) Drain-Down
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench Trench MOSFET (OptiMOS 5)
Cooling Top-side cooled (case above PCB) β€”
RoHS Status Compliant Compliant
Product Family β€” OptiMOS 5
Polarity / Channel Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at TA=25C β€” 33 A
Pulsed Drain Current (IDM) at TC=25C β€” 259 A
On-Resistance RDS(on) typical at VGS=10V β€” 1.5 mOhm
Total Power Dissipation (TA) β€” 3 W
Total Power Dissipation (TC) β€” 188 W
Operating Temperature Range β€” -55 C to +175 C
MSL (Moisture Sensitivity Level) β€” 1

Datasheets & Resources

Browse All Products Create BOM Request Quote