IPTC039N15NM5ATMA1 vs ISC015N06NM5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPTC039N15NM5ATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPTC039N15NM5ATMA1 ISC015N06NM5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Ta 21 A —
Continuous Drain Current (ID) at Tc 190 A —
Power Dissipation (PD) at Ta 3.8 W —
Power Dissipation (PD) at Tc 319 W —
On-Resistance RDS(on) typical 3.9 mOhm —
Gate Charge Qg typical 74 nC —
Maximum Gate-Source Voltage (VGS) 20 V —
Temperature na Operasyon -55 C to +175 C (junction) —
Packhaging PG-HDSOP-16-2 (top-side cooled) PG-TDSON-8 (PQFN 5x6) Drain-Down
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench Trench MOSFET (OptiMOS 5)
Cooling Top-side cooled (case above PCB) —
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
Hanay ng Temperature na Operasyon — -55 C to +175 C
MSL (Moisture Sensitivity Level) — 1

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