IQDH88N06LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQE022N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQDH88N06LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Arus Kumpal Tetap (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pembuangan Kuasa (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | -55C to +150C |
| Kemasan | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 9 (with exposed pad) | 9 (PG-WHTFN-9) |
| Cooling | Dual-side cooling capable | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Technology Family | — | OptiMOS 5 |