IRF1310NSTRLPBF vs IPB100N12S305ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1310NSTRLPBF disebabkan oleh Infineon dan IPB100N12S305ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF1310NSTRLPBF | IPB100N12S305ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 °C to +175 °C (TJ) |
| Kemasan | D2PAK (TO-263AB) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR MOSFET (HEXFET) | — |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 120V |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| Kemasan / Case | — | PG-TO263-3-2 (D2PAK) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Status RoHS | — | Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |